Recent test results of a flight X-band solid-state power amplifier utilizing GaAs MESFET, HFET, and PHEMT technologies.
| Autor: | Nhan, E., Sheng Cheng, Jose, M.J., Fortney, S.O., Penn, J.E. |
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| Zdroj: | GaAs Reliability 2002 Workshop; 2002, p37-44, 8p |
| Databáze: | Complementary Index |
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