Simultaneous subthreshold and gate-oxide tunneling leakage current analysis in nanometer CMOS design.

Autor: Dongwoo Lee, Kwong, W., Blaauw, D., Sylvester, D.
Zdroj: 2003 Proceedings of the Fourth International Symposium on Quality Electronic Design; 2003, p287-292, 6p
Databáze: Complementary Index