Simultaneous subthreshold and gate-oxide tunneling leakage current analysis in nanometer CMOS design.
Autor: | Dongwoo Lee, Kwong, W., Blaauw, D., Sylvester, D. |
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Zdroj: | 2003 Proceedings of the Fourth International Symposium on Quality Electronic Design; 2003, p287-292, 6p |
Databáze: | Complementary Index |
Externí odkaz: |