Ultra-shallow source/drain junctions for nanoscale CMOS using selective silicon-germanium technology.
| Autor: | Ozturk, M.C., Pesovic, N., Kang, I., Liu, J., Mo, H., Gannavaram, S. |
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| Zdroj: | Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C); 2001, p77-82, 6p |
| Databáze: | Complementary Index |
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