Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack.
| Autor: | Veloso, A., Yu, H.Y., Lauwers, A., Chang, S.Z., Adelmann, C., Onsia, B., Demand, M., Brus, S., Vrancken, C., Singanamalla, R., Lehnen, P., Kittl, J., Kauerauf, T., Vos, R., O'Sullivan, B.J., Van Elshocht, S., Mitsuhashi, R., Whittemore, G., Yin, K.M., Niwa, M. |
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| Zdroj: | ESSDERC 2007 - 37th European Solid State Device Research Conference; 2007, p195-198, 4p |
| Databáze: | Complementary Index |
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