Effects of low-temperature water vapor annealing of strained SiGe surface-channel pMOSFETs with high-κ dielectric.
| Autor: | Westlinder, J., Sjoblom, G., Wu, D., Hellstrom, P.-E., Olsson, J., Zhang, S.-L., Ostling, M. |
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| Zdroj: | ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p525-528, 4p |
| Databáze: | Complementary Index |
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