A 0.25 μm SiGe BiCMOS technology including integrated RF passive components optimised for low power applications.
Autor: | Van Huylenbroeck, S., Jenei, S., Carchon, G., Piontek, A., Vleugels, F., Decoutere, S. |
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Zdroj: | ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p505-508, 4p |
Databáze: | Complementary Index |
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