A 0.25 μm SiGe BiCMOS technology including integrated RF passive components optimised for low power applications.

Autor: Van Huylenbroeck, S., Jenei, S., Carchon, G., Piontek, A., Vleugels, F., Decoutere, S.
Zdroj: ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p505-508, 4p
Databáze: Complementary Index