Drain leakage mechanisms in fully depleted SOI devices with undoped channel [MOSFETs].
| Autor: | Luyken, R.J., Specht, M., Rosner, W., Hartwich, J., Hofmann, F., Dreeskornfeld, L., Landgraf, E., Schulz, T., Stadele, M., Kretz, J., Risch, L. |
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| Zdroj: | ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p419-422, 4p |
| Databáze: | Complementary Index |
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