Fully working high performance multi-channel field effect transistor (McFET) SRAM cell on bulk Si substrate using TiN single metal gate.

Autor:	Sung Min Kim, Eun Jung Yoon, Min Sang Kim, Chang Woo Oh, Sung Dae Suk, Ming Li, Sung Young Lee, Kyoung Hwan Yeo, Sung Hwan Kim, Dong Uk Choe, Dong-Won Kim, Donggun Park, Kinam Kim, Byung-il Ryu
Zdroj:	2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p196-197, 2p
Databáze:	Complementary Index
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