Nonvolatile MOSFET memory based on high density WN nanocrystal layer fabricated by novel PNL (pulsed nucleation layer) method.
| Autor: | Seung-Hyun Lim, Kyong Hee Joo, Jin-Ho Park, Sang-Woo Lee, Woong Hee Sohn, Changwon Lee, Gil Heyun Choi, In-Seok Yeo, U-In Chung, Joo Tae Moon, Byung-Il Ryu |
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| Zdroj: | 2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p190-191, 2p |
| Databáze: | Complementary Index |
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