Mobility and CMOS devices/circuits on sub-10nm [110] ultra thin body SOI.

Autor: Huiling Shang, Rubino, J., Doris, B., Topol, A., Sleight, J., Cai, J., Chang, L., Ott, A., Kedzierski, J., Chan, K., Shi, L., Babich, K., Newbury, J., Sikorski, E., To, B.N., Zhang, Y., Guarini, K.W., Meikei Ieong
Zdroj: 2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p78-79, 2p
Databáze: Complementary Index