Fully working 1.10 μm2 embedded 6T-SRAM technology with high-k gate dielectric device for ultra low power applications.
| Autor: | Hyuk-Ju Ryu, Woo-Young Chung, You-Jean Jang, Yong-Jun Lee, Hyung-Seok Jung, Chang-Bong Oh, Hee-Sung Kang, Young-Wug Kim |
|---|---|
| Zdroj: | 2004 Digest of Technical Papers. 2004 Symposium on VLSI Technology; 2004, p38-39, 2p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|