High mobility SiGe/Si n-type structures and field effect transistors on sapphire substrates.

Autor: Alterovitz, S.A., Ponchak, G.E., Mueller, C.H., Croke, E.T.
Zdroj: 2004 Digest of Papers. 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems; 2004, p107-110, 4p
Databáze: Complementary Index