Photoluminescence and electron transport properties of silicon-doped Ga0.52In0.48P/GaAs grown using a valved phosphorus cracker cell in solid source molecular beam epitaxy.
| Autor: | Yoon, S.F., Mah, K.W., Zheng, H.Q. |
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| Zdroj: | Conference Proceedings 2000 International Conference on Indium Phosphide & Related Materials (Cat. No.00CH37107); 2000, p166-169, 4p |
| Databáze: | Complementary Index |
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