The effect of defects on InAs/AlSb/GaSb resonant interband tunneling diodes.

Autor: Magno, R., Bracker, A.S., Bennett, B.R., Twigg, M.E., Weaver, B.D.
Zdroj: Conference Proceedings 2000 International Conference on Indium Phosphide & Related Materials (Cat. No.00CH37107); 2000, p122-125, 4p
Databáze: Complementary Index