The effect of defects on InAs/AlSb/GaSb resonant interband tunneling diodes.
Autor: | Magno, R., Bracker, A.S., Bennett, B.R., Twigg, M.E., Weaver, B.D. |
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Zdroj: | Conference Proceedings 2000 International Conference on Indium Phosphide & Related Materials (Cat. No.00CH37107); 2000, p122-125, 4p |
Databáze: | Complementary Index |
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