Properties of InN Grown by Remote Plasma Enhanced Chemical Vapour Deposition.

Autor:	Chen, P.P.T., Scott, K., Butcher, A., Wintrebert-Fouquet, M., Prince, K.E.
Zdroj:	Conference on Optoelectronic & Microelectronic Materials & Devices, 2004; 2004, p85-88, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu