High-linearity and variable gate-voltage swing dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors.
| Autor: | Lour, W.-S., Tsai, M.-K., Chen, K.-C., Wu, Y.-W., Tan, S.-W., Yang, Y.-J. |
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| Zdroj: | COMMAD 2000 Proceedings Conference on Optoelectronic & Microelectronic Materials & Devices; 2000, p226-229, 4p |
| Databáze: | Complementary Index |
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