Investigation of LDD n-MOSFET hot-carrier degradation with high gate-to-drain transverse field stressing at cryogenic temperature.
| Autor: | Hsu, C.T., Lau, M.M., Yeow, Y.T. |
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| Zdroj: | COMMAD 2000 Proceedings Conference on Optoelectronic & Microelectronic Materials & Devices; 2000, p157-160, 4p |
| Databáze: | Complementary Index |
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