A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples].
| Autor: | Cuoco, V., Neo, W.C.E., de Vreede, L.C.N., de Graaff, H.C., Nanver, L.K., Buisman, K., Wu, H.C., Jos, H.F.F., Burghartz, J.N. |
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| Zdroj: | Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits & Technology, 2004; 2004, p148-151, 4p |
| Databáze: | Complementary Index |
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