Barrier effects in SiGe HBT: modeling of high-injection base current increase.

Autor: Fregonese, S., Zimmer, T., Maneux, C., Sulima, P.Y.
Zdroj: Proceedings of the 2004 Meeting Bipolar/BiCMOS Circuits & Technology, 2004; 2004, p104-107, 4p
Databáze: Complementary Index