A 0.13 μm BiCMOS technology featuring a 200/280 GHz (fT/fmax) SiGe HBT.
| Autor: | Orner, B.A., Liu, Q.Z., Rainey, B., Stricker, A., Geiss, P., Gray, P., Zierak, M., Gordon, M., Collins, D., Ramachandran, V., Hodge, W., Willets, C., Joseph, A., Dunn, J., Rieh, J.-S., Jeng, S.-J., Eld, E., Freeman, G., Ahlgren, D. |
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| Zdroj: | Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2003; 2003, p203-206, 4p |
| Databáze: | Complementary Index |
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