Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay.
| Autor: | Tominari, T., Wada, S., Tokunaga, K., Koyu, K., Kubo, M., Udo, T., Seto, M., Ohhata, K., Hosoe, H., Kiyota, Y., Washio, K., Hashimoto, T. |
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| Zdroj: | Proceedings of the Bipolar/BiCMOS Circuits & Technology Meeting, 2003; 2003, p107-110, 4p |
| Databáze: | Complementary Index |
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