Gate Material Properties Induced 0.25um SRAM Marginality.
| Autor: | Sallagoity, P., Diop, O., Merenda, P., Juge, M., Oudin, F., Beaulieu, G., Seube, L., Gra, F. |
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| Zdroj: | 32nd European Solid-State Device Research Conference; 2002, p575-578, 4p |
| Databáze: | Complementary Index |
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