70 nm Damascene-Gate MOSFETs with Minimal Polysilicon Gate-Depletion.
| Autor: | Hanafi, H.I., Arndt, R., Boyd, D., Natzle, W., Ticknor, A. |
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| Zdroj: | 31st European Solid-State Device Research Conference; 2001, p143-146, 4p |
| Databáze: | Complementary Index |
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