On the InGaP/In(x)Ga(1-x)As Pseudomorphic High Electron-Mobility Transistor s with High-Temperature Reliabilities.
| Autor: | Liu, W.C., Chang, W.L., Lour, W.S., Yu, K.H., Lin, K.W., Lin, K.P., Yen, C.H. |
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| Zdroj: | 30th European Solid-State Device Research Conference; 2000, p428-431, 4p |
| Databáze: | Complementary Index |
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