Dose Loss and Defect Mechanisms in Antimony Buried Layers for a 0.35um BiCMOS Process.
| Autor: | Deignan, A., McAuliffe, D., Doyle, D., Moloney, K., Roche, M., O'Neill, M. |
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| Zdroj: | 30th European Solid-State Device Research Conference; 2000, p272-275, 4p |
| Databáze: | Complementary Index |
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