InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers.
Autor: | Sokolich, M., Chen, M.Y., Chow, D.H., Royter, Y., Thomas III, S., Fields, C.H., Hitko, D.A., Shi, B., Montes, M., Bui, S.S., Boegeman, Y.K., Arthur, A., Duvall, J., Martinez, R., Hussain, T., Rajavel, R.D., Li, J.C., Elliott, K., Thompson, J.D. |
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Zdroj: | 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003; 2003, p219-222, 4p |
Databáze: | Complementary Index |
Externí odkaz: |