Monolithic integration of In0.53Ga0.47As photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on GaAs substrates for long wavelength OEIC applications.
| Autor: | Jang, J.H., Cueva, G., Sankaralingam, R., Fay, P., Hoke, W.E., Adesida, I. |
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| Zdroj: | 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposium; 2002, p55-58, 4p |
| Databáze: | Complementary Index |
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