On the design of power-rail esd clamp circuit with consideration of gate leakage current in 65-nm low-voltage CMOS process.
Autor: | Ming-Dou Ker, Po-Yen Chiu, Fu-Yi Tsai, Yeong-Jar Chang |
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Zdroj: | 2009 IEEE International Symposium on Circuits & Systems; 2009, p2281-2284, 4p |
Databáze: | Complementary Index |
Externí odkaz: |