On the design of power-rail esd clamp circuit with consideration of gate leakage current in 65-nm low-voltage CMOS process.

Autor: Ming-Dou Ker, Po-Yen Chiu, Fu-Yi Tsai, Yeong-Jar Chang
Zdroj: 2009 IEEE International Symposium on Circuits & Systems; 2009, p2281-2284, 4p
Databáze: Complementary Index