A 1.6V 3.3Gb/s GDDR3 DRAM with dual-mode phase- and delay-locked loop using power-noise management with unregulated power supply in 54nm CMOS.
Autor: | Hyun-Woo Lee, Won-Joo Yun, Young-Kyoung Choi, Hyang-Hwa Choi, Jong-Jin Lee, Ki-Han Kim, Shin-Deok Kang, Ji-Yeon Yang, Jae-Suck Kang, Hyeng-Ouk Lee, Dong-Uk Lee, Sujeong Sim, Young-Ju Kim, Won-Jun Choi, Keun-Soo Song, Sang-Hoon Shin, Hyung-Wook Moon, Seung-Wook Kwack, Jung-Woo Lee, Nak-Kyu Park |
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Zdroj: | 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers; 2009, p140-141a, 3p |
Databáze: | Complementary Index |
Externí odkaz: |