8Gb 3D DDR3 DRAM using through-silicon-via technology.
| Autor: | Uksong Kang, Hoe-Ju Chung, Seongmoo Heo, Soon-Hong Ahn, Hoon Lee, Soo-Ho Cha, Jaesung Ahn, DukMin Kwon, Jin Ho Kim, Jae-Wook Lee, Han-Sung Joo, Woo-Seop Kim, Hyun-Kyung Kim, Eun-Mi Lee, So-Ra Kim, Keum-Hee Ma, Dong-Hyun Jang, Nam-Seog Kim, Man-Sik Choi, Sae-Jang Oh |
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| Zdroj: | 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers; 2009, p130-131a, 3p |
| Databáze: | Complementary Index |
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