200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz.
| Autor: | Lobisser, E., Griffith, Z., Jain, V., Thibeault, B.J., Rodwell, M.J.W., Loubychev, D., Snyder, A., Ying Wu, Fastenau, J.M., Liu, A.W.K. |
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| Zdroj: | 2009 IEEE International Conference on Indium Phosphide & Related Materials; 2009, p16-19, 4p |
| Databáze: | Complementary Index |
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