Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs.
| Autor: | Bouloukou, A., Boudjelida, B., Sobih, A., Boulay, S., Sly, J., Missous, M. |
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| Zdroj: | 2008 International Conference on Advanced Semiconductor Devices & Microsystems; 2008, p79-82, 4p |
| Databáze: | Complementary Index |
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