A 45nm 4Gb 3-Dimensional Double-Stacked Multi-Level NAND Flash Memory with Shared Bitline Structure.

Autor: Ki-Tae Park, Doogon Kim, Soonwook Hwang, Myounggon Kang, Hoosung Cho, Youngwook Jeong, Yong-ll Seo, Jaehoon Jang, Han-Soo Kim, Soon-Moon Jung, Yeong-Taek Lee, Changhyun Kim, Won-Seong Lee
Zdroj: 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers; 2008, p510-632, 123p
Databáze: Complementary Index