Stable high-density FD/SOI SRAM with selective back-gate bias using dual buried oxide.
| Autor: | Keunwoo Kim, Kuang, J.B., Gebara, F., Ngo, H.C., Ching-Te Chuang, Nowka, K.J. |
|---|---|
| Zdroj: | 2008 IEEE International SOI Conference; 2008, p37-38, 2p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|