Stable high-density FD/SOI SRAM with selective back-gate bias using dual buried oxide.
Autor: | Keunwoo Kim, Kuang, J.B., Gebara, F., Ngo, H.C., Ching-Te Chuang, Nowka, K.J. |
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Zdroj: | 2008 IEEE International SOI Conference; 2008, p37-38, 2p |
Databáze: | Complementary Index |
Externí odkaz: |