Relaxation of localized charge in trapping-based nonvolatile memory devices.
| Autor: | Janai, M., Shappir, A., Bloom, I., Eitan, B. |
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| Zdroj: | 2008 IEEE International Reliability Physics Symposium; 2008, p417-423, 7p |
| Databáze: | Complementary Index |
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