Multi-bit upsets in 65nm SOI SRAMs.

Autor: Cannon, E.H., Gordon, M.S., Heidel, D.F., KleinOsowski, A.J., Oldiges, P., Rodbell, K.P., Tang, H.
Zdroj: 2008 IEEE International Reliability Physics Symposium; 2008, p195-201, 7p
Databáze: Complementary Index