Heterogeneous wafer-scale integration of 250nm, 300GHz InP DHBTs with a 130nm RF-CMOS technology.
| Autor: | Li, J.C., Royter, Y., Patterson, P.R., Hussain, T., Duvall, J.R., Montes, M.C., Le, D., Hitko, D.A., Sokolich, M., Chow, D.H., Elliott, K.R. |
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| Zdroj: | 2008 IEEE International Electron Devices Meeting; 2008, p1-3, 3p |
| Databáze: | Complementary Index |
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