Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond.
| Autor: | Kawasaki, H., Khater, M., Guillorn, M., Fuller, N., Chang, J., Kanakasabapathy, S., Chang, L., Muralidhar, R., Babich, K., Yang, Q., Ott, J., Klaus, D., Kratschmer, E., Sikorski, E., Miller, R., Viswanathan, R., Zhang, Y., Silverman, J., Ouyang, Q., Yagishita, A. |
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| Zdroj: | 2008 IEEE International Electron Devices Meeting; 2008, p1-4, 4p |
| Databáze: | Complementary Index |
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