High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor.
| Autor: | Yang, B., Takalkar, R., Ren, Z., Black, L., Dube, A., Weijtmans, J.W., Li, J., Johnson, J.B., Faltermeier, J., Madan, A., Zhu, Z., Turansky, A., Xia, G., Chakravarti, A., Pal, R., Chan, K., Reznicek, A., Adam, T.N., de Souza, J.P., Harley, E.C.T. |
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| Zdroj: | 2008 IEEE International Electron Devices Meeting; 2008, p1-4, 4p |
| Databáze: | Complementary Index |
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