Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations.

Autor: Abele, P., Schafer, M., Splettstosser, J., Thinnes, M., Stieglauer, H., Behammer, D.
Zdroj: 2008 European Microwave Integrated Circuit Conference; 2008, p56-59, 4p
Databáze: Complementary Index