Self-Aligned n-channel MOSFET on InP and In0.53Ga0.47As Using Physical Vapor Deposition HfO2 and Silicon Interface Passivation Layer.
| Autor: | InJo Ok, Kim, H., Zhang, M., Zhu, F., Zhao, H., Park, S., Yum, J., Garcia, D., Majhi, P., Goel, N., Tsai, W., Gaspe, C.K., Santos, M.B., Lee, J.C. |
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| Zdroj: | 2008 Device Research Conference; 2008, p91-92, 2p |
| Databáze: | Complementary Index |
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