Ni silicidation on heavily doped Si substrates.
Autor: | Ahmet, P., Shiozawa, T., Nagahiro, K., Nagata, T., Kakushima, K., Tsutsui, K., Chikyow, T., Iwai, H. |
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Zdroj: | 2008 9th International Conference on Solid-State & Integrated-Circuit Technology; 2008, p1304-1307, 4p |
Databáze: | Complementary Index |
Externí odkaz: |