Ni silicidation on heavily doped Si substrates.

Autor: Ahmet, P., Shiozawa, T., Nagahiro, K., Nagata, T., Kakushima, K., Tsutsui, K., Chikyow, T., Iwai, H.
Zdroj: 2008 9th International Conference on Solid-State & Integrated-Circuit Technology; 2008, p1304-1307, 4p
Databáze: Complementary Index