An analytical threshold voltage model for nanoscale GAA MOSFETs including effects of hot-carrier induced interface charges.
| Autor: | Ghoggali, Z., Djeffal, F., Abdi, M.A., Arar, D., Lakhdar, N., Bendib, T. |
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| Zdroj: | 2008 3rd International Design & Test Workshop; 2008, p93-97, 5p |
| Databáze: | Complementary Index |
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