Physics based current and capacitance model of short-channel double gate and gate-all-around MOSFETs.
| Autor: | Borli, H., Kolberg, S., Fjeldly, T.A. |
|---|---|
| Zdroj: | 2008 2nd IEEE International Nanoelectronics Conference; 2008, p493-498, 6p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|