The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash.

Autor:	Sandhya, C., Ganguly, U., Singh, K.K., Olsen, C., Seutter, S.M., Conti, G., Ahmed, K., Krishna, N., Vasi, J., Mahapatra, S.
Zdroj:	2008 15th International Symposium on the Physical & Failure Analysis of Integrated Circuits; 2008, p1-7, 7p
Databáze:	Complementary Index
Externí odkaz: