A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13μm SiGe:C BiCMOS Technology.
| Autor: | Choi, L.J., Van Huylenbroeck, S., Donkers, J., van Noort, W.D., Piontek, A., Sibaja-Hernandez, A., Meunier-Beillard, P., Neuilly, F., Kunnen, E., Leray, P., Vleugels, F., Venegas, R., Hijzen, E., Decoutere, S. |
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| Zdroj: | 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems; 2007, p158-161, 4p |
| Databáze: | Complementary Index |
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