Strain enhanced FUSI/HfSiON Technology with optimized CMOS Process Window.
| Autor: | Veioso, A., Verheyen, P., Vos, R., Brus, S., Ito, S., Mitsuhashi, R., Paraschiv, V., Shi, X., Onsia, B., Arnauts, S., Loo, R., Lauwers, A., Conard, T., de Marneffe, J.-F., Goossens, D., Baute, D., Locorotondo, S., Chiarella, T., Kerner, C., Vrancken, C. |
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| Zdroj: | 2007 IEEE Symposium on VLSI Technology; 2007, p200-201, 2p |
| Databáze: | Complementary Index |
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