Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications.
| Autor: | Jung-Geun Jee, WookHyun Kwon, Woong Lee, Jung-Hyun Park, Hyeong-Ki Kim, Ho-Min Son, Won-Jun Chang, Jae-Jong Han, Yong-Woo Hyung, Hyeon-Deok Lee |
|---|---|
| Zdroj: | 2007 IEEE International Reliability Physics Symposium Proceedings 45th Annual; 2007, p184-189, 6p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|