Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN Technique.
| Autor: | Kumar, E.N., Maheta, V.D., Purawat, S., Islam, A.E., Olsen, C., Ahmed, K., Alam, M.A., Mahapatra, S. |
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| Zdroj: | 2007 IEEE International Electron Devices Meeting; 2007, p809-812, 4p |
| Databáze: | Complementary Index |
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