A Novel Resistance Memory with High Scalability and Nanosecond Switching.
| Autor: | Aratani, K., Ohba, K., Mizuguchi, T., Yasuda, S., Shiimoto, T., Tsushima, T., Sone, T., Endo, K., Kouchiyama, A., Sasaki, S., Maesaka, A., Yamada, N., Narisawa, H. |
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| Zdroj: | 2007 IEEE International Electron Devices Meeting; 2007, p783-786, 4p |
| Databáze: | Complementary Index |
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